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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SIDC05D60C8X7SA2

SIDC05D60C8X7SA2

DIODE GEN PURP 600V 15A WAFER

Infineon Technologies

2201 0.00
- +

Arabaya ekle

İstem şimdi

SIDC05D60C8X7SA2

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -40°C ~ 175°C 1.95 V @ 15 A
MUR160HA0G

MUR160HA0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation

3217 0.00
- +

Arabaya ekle

İstem şimdi

MUR160HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
SIDC03D60C8X7SA2

SIDC03D60C8X7SA2

DIODE SWITCHING 600V 10A WAFER

Infineon Technologies

3485 0.00
- +

Arabaya ekle

İstem şimdi

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -40°C ~ 175°C 1.95 V @ 10 A
MUR190 A0G

MUR190 A0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

3772 0.00
- +

Arabaya ekle

İstem şimdi

MUR190 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
SIDC08D60C8X7SA1

SIDC08D60C8X7SA1

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies

2405 0.00
- +

Arabaya ekle

İstem şimdi

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
MUR190HA0G

MUR190HA0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation

2711 0.00
- +

Arabaya ekle

İstem şimdi

MUR190HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
SIDC14D60C8X7SA1

SIDC14D60C8X7SA1

DIODE GEN PURP 600V 50A WAFER

Infineon Technologies

2337 0.00
- +

Arabaya ekle

İstem şimdi

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 50A (DC) -40°C ~ 175°C 1.9 V @ 50 A
MUR420HA0G

MUR420HA0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3553 0.00
- +

Arabaya ekle

İstem şimdi

MUR420HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
SIDC07D60F6X1SA3

SIDC07D60F6X1SA3

DIODE SWITCHING 600V WAFER

Infineon Technologies

2754 0.00
- +

Arabaya ekle

İstem şimdi

SIDC07D60F6X1SA3

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 22.5A (DC) -40°C ~ 175°C 1.6 V @ 22.5 A
MUR440 A0G

MUR440 A0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3113 0.00
- +

Arabaya ekle

İstem şimdi

MUR440 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SIDC06D65C8X1SA1

SIDC06D65C8X1SA1

DIODE GEN PURP 600V 20A WAFER

Infineon Technologies

3300 0.00
- +

Arabaya ekle

İstem şimdi

SIDC06D65C8X1SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 240 nA @ 650 V 650 V 20A (DC) -40°C ~ 175°C 1.87 V @ 20 A
MUR440HA0G

MUR440HA0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3164 0.00
- +

Arabaya ekle

İstem şimdi

MUR440HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SIDC07D60E6X1SA3

SIDC07D60E6X1SA3

DIODE SWITCHING 600V WAFER

Infineon Technologies

3920 0.00
- +

Arabaya ekle

İstem şimdi

SIDC07D60E6X1SA3

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -55°C ~ 150°C 1.25 V @ 15 A
MUR460HA0G

MUR460HA0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2107 0.00
- +

Arabaya ekle

İstem şimdi

MUR460HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SIDC08D60C8X1SA2

SIDC08D60C8X1SA2

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies

2776 0.00
- +

Arabaya ekle

İstem şimdi

SIDC08D60C8X1SA2

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
MUR4L20 A0G

MUR4L20 A0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3557 0.00
- +

Arabaya ekle

İstem şimdi

MUR4L20 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
SIDC06D60F6X7SA1

SIDC06D60F6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

3457 0.00
- +

Arabaya ekle

İstem şimdi

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -40°C ~ 175°C 1.6 V @ 15 A
MUR4L20HA0G

MUR4L20HA0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

2616 0.00
- +

Arabaya ekle

İstem şimdi

MUR4L20HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
SIDC03D60F6X7SA1

SIDC03D60F6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2709 0.00
- +

Arabaya ekle

İstem şimdi

SIDC03D60F6X7SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 6A (DC) -40°C ~ 175°C 1.6 V @ 6 A
MUR4L40 A0G

MUR4L40 A0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3697 0.00
- +

Arabaya ekle

İstem şimdi

MUR4L40 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
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