Diodes-Rectifiers-Single - Element (Hong Kong) Technology Co., Ltd.

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Mfr. Bölüm #	Stock	Ödül	Kıymet	Veri sayfası	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
ST10150 DIODE SCHOTTKY 150V TO220AC SMC Diode Solutions	832	0.82	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	150 µA @ 150 V	150 V	-	-55°C ~ 150°C	1.2 V @ 10 A
LSIC2SD065E16CCA DIODE SCHOTTKY SIC 650V 8A DUAL Littelfuse Inc.	500	9.24	- + Arabaya ekle İstem şimdi	Datenblatt	Tube	Automotive, AEC-Q101, GEN2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	415pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	23A (DC)	-55°C ~ 175°C	1.8 V @ 8 A
SDURF2040 DIODE GEN PURP 400V ITO220AC SMC Diode Solutions	502	0.94	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	15 µA @ 400 V	400 V	-	-55°C ~ 150°C	1.51 V @ 20 A
IDP12E120XKSA1 DIODE GEN PURP 1.2KV 28A TO220-2 Infineon Technologies	246	2.20	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	150 ns	100 µA @ 1200 V	1200 V	28A (DC)	-55°C ~ 150°C	2.15 V @ 12 A
MMDL770T1G DIODE SCHOTTKY 70V SOD323 onsemi	826	0.31	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	1pF @ 20V, 1MHz	-	200 nA @ 35 V	70 V	-	-55°C ~ 150°C	1 V @ 10 mA
TSD3GHV7G 3A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation	4540	1.85	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	-	1 µA @ 400 V	400 V	3A	-55°C ~ 175°C	-
ST1060 DIODE SCHOTTKY 60V TO220AC SMC Diode Solutions	760	0.82	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	850 µA @ 60 V	60 V	-	-55°C ~ 150°C	650 mV @ 10 A
APT10SCD120K DIODE SCHOTTKY 1.2KV 10A TO220 Microchip Technology	505	9.64	- + Arabaya ekle İstem şimdi		Bulk		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	-	0 ns	-	1200 V	10A	-	1.5 V @ 10 A
STTH310UFY DIODE GEN PURP 1KV 3A SMBFLAT STMicroelectronics	394	0.94	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, ECOPACK®2	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 1000 V	1000 V	3A	-40°C ~ 175°C	1.7 V @ 3 A
VS-E5TX3012-M3 30A, 1200V, "H" SERIES FRED PT I Vishay General Semiconductor - Diodes Division	500	2.22	- + Arabaya ekle İstem şimdi		Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	50 µA @ 1200 V	1200 V	30A	-55°C ~ 175°C	3.3 V @ 30 A
FDLL333 DIODE GEN PURP 125V 200MA SOD80 onsemi	651	0.31	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	6pF @ 0V, 1MHz	-	3 nA @ 125 V	125 V	200mA	175°C (Max)	1.15 V @ 300 mA
CMR3U-02 TR13 PBFREE DIODE GEN PURP 200V 3A SMC Central Semiconductor Corp	2530	1.85	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	5 µA @ 200 V	200 V	3A	-65°C ~ 175°C	1 V @ 3 A
S5Q M3G 5A, 1200V, STANDARD RECOVERY REC Taiwan Semiconductor Corporation	750	0.82	- + Arabaya ekle İstem şimdi		Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	27pF @ 4V, 1MHz	-	10 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 150°C	1.15 V @ 5 A
LSIC2SD065A20A SIC SCHOTTKY DIOD 650V 20A TO220 Littelfuse Inc.	886	10.40	- + Arabaya ekle İstem şimdi	Datenblatt	Tube	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	960pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	45A (DC)	-55°C ~ 175°C	1.8 V @ 20 A
SDUR1560 DIODE GEN PURP 600V TO220AC SMC Diode Solutions	980	0.95	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 600 V	600 V	-	-55°C ~ 175°C	1.7 V @ 15 A
VS-C04ET07T-M3 DIODE SCHOTTKY 650V 4A TO220AC Vishay General Semiconductor - Diodes Division	495	2.24	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	170pF @ 1V, 1MHz	-	25 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
BAS29 DIODE GEN PURP 120V 200MA SOT23 onsemi	350	0.31	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	2pF @ 0V, 1MHz	50 ns	100 nA @ 90 V	120 V	200mA	150°C (Max)	1 V @ 200 mA
BYC20-600,127 DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors	5415	1.86	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	200 µA @ 600 V	500 V	20A	150°C (Max)	2.9 V @ 20 A
FMY-1106S DIODE GEN PURP 600V 10A TO220F Sanken	238	0.82	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	200 ns	30 µA @ 600 V	600 V	10A	-40°C ~ 150°C	1.15 V @ 10 A
WNSC101200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	480	10.51	- + Arabaya ekle İstem şimdi	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 5 A

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