Fotoğraf | Mfr. Bölüm # | Stock | Ödül | Kıymet | Veri sayfası | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NS8KT-E3/45DIODE GEN PURP 800V 8A TO220AC |
998 | 0.94 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||||
863-1N4007RLG1N4007 DIODE 1A/1000V RECTIFIER |
484 | 0.16 |
Arabaya ekleİstem şimdi |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |||||
LL42-GS08DIODE SCHOTTKY 30V 200MA MINMELF |
3105 | 0.51 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA | -55°C ~ 125°C | 650 mV @ 50 mA | ||||
IDH20G65C6XKSA1DIODE SCHOTTKY 650V 41A TO220-2 |
2891 | 8.46 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 970pF @ 1V, 1MHz | 0 ns | 67 µA @ 420 V | 650 V | 41A (DC) | -55°C ~ 175°C | 1.35 V @ 20 A | ||||
RF071LAM4STRDIODE GEN PURP 400V 1A PMDTM |
3832 | 0.40 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 400 V | 400 V | 1A | 150°C (Max) | 1.25 V @ 700 mA | ||||
STTH1R06ADIODE GEN PURP 600V 1A SMA |
3141 | 0.48 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 45 ns | 1 µA @ 600 V | 600 V | 1A | 175°C (Max) | 1.7 V @ 1 A | ||||
NS8GT-E3/45DIODE GEN PURP 400V 8A TO220AC |
590 | 0.94 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||||
MR826DIODE FR D8X7.5 600V 5A |
1000 | 0.17 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 10 µA @ 600 V | 600 V | 5A | -50°C ~ 150°C | 1.2 V @ 5 A | ||||
SMD210PL-TPDIODE SCHOTTKY 100V 2A SOD123FL |
7395 | 0.43 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 210pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 2A | -65°C ~ 150°C | 850 mV @ 2 A | ||||
GD10MPS17H1700V 10A TO-247-2 SIC SCHOTTKY |
3031 | 8.67 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 721pF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 28A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | |||
SD103AW-HE3-08DIODE SCHOTTKY 350MA 40V SOD123 |
3735 | 0.40 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | |||
SS24SHE3_B/HDIODE SCHOTTKY 2A 40V DO-214AC |
3793 | 0.47 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A | |||
VS-8ETH03-1-M3DIODE GEN PURP 300V 8A TO262AA |
985 | 0.95 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A | |||
UF4003R-200V 1A ULTRA FAST |
124 | 0.19 |
Arabaya ekleİstem şimdi |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 1 V @ 1 A | ||||
SL210PL-TPDIODE SCHOTTKY 100V 2A SOD123FL |
3579 | 0.43 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 720 mV @ 2 A | ||||
IDW20G65C5XKSA1DIODE SCHOTTKY 650V 20A TO247-3 |
2691 | 9.49 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 590pF @ 1V, 1MHz | 0 ns | 210 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |||
NSR0170P2T5GDIODE SCHOTTKY 70V 70MA SOD923 |
2716 | 0.44 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 3 µA @ 70 V | 70 V | 70mA (DC) | -55°C ~ 150°C | 730 mV @ 15 mA | ||||
BAS7002LE6327XTMA1DIODE SCHOTTKY 70V 70MA TSLP-2 |
3509 | 0.47 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | ||||
VS-8ETU04-1-M3DIODE GEN PURP 400V 8A TO262AA |
895 | 0.98 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A | |||
SB3H150SCHOTTKY DO-201 150V 3A |
1000 | 0.20 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 820 mV @ 3 A |
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