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| Fotoğraf | Mfr. Bölüm # | Stock | Ödül | Kıymet | Veri sayfası | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SBR1U150SA-13DIODE SBR 150V 1A SMA |
3911 | 0.57 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 1A | -65°C ~ 150°C | 700 mV @ 1 A | ||
|
DHG10I1200PADIODE GEN PURP 1.2KV 10A TO220AC |
2323 | 2.01 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 15 µA @ 1200 V | 1200 V | 10A | -55°C ~ 150°C | 2.22 V @ 10 A | |||
|
PMEG2010AEB/S500115RECTIFIER DIODE, SCHOTTKY |
3881 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
|
SS26-E3/5BTDIODE SCHOTTKY 60V 2A DO214AA |
2436 | 0.55 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 125°C | 700 mV @ 2 A | |||
|
VS-6EWL06FN-M3DIODE GEN PURP 600V 6A TO252AA |
2536 | 0.95 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 154 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.25 V @ 6 A | ||
|
GL41D-E3/96DIODE GEN PURP 200V 1A DO213AB |
2971 | 0.48 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
STTH1R04UDIODE GEN PURP 400V 1A SMB |
3373 | 0.54 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 5 µA @ 400 V | 400 V | 1A | 175°C (Max) | 1.5 V @ 1 A | |||
|
STPSC10065DLF650 V 10 A POWER SCHOTTKY SILICO |
3256 | 3.75 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 670pF @ 0V, 1MHz | 0 ns | 130 mA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.45 V @ 10 A | ||
|
1N5406-FDIODE GEN PURP 600V 3A DO-201AD |
2164 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 200 nA @ 1000 V | - | 3A | -55°C ~ 150°C | 1 V @ 3 A | |||
|
XBS104V14R-GDIODE SCHOTTKY 40V 1A SOD123A |
3048 | 0.44 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 1V, 1MHz | 41 ns | 2 mA @ 40 V | 40 V | 1A | 125°C (Max) | 410 mV @ 1 A | |||
|
MURD530T4GDIODE GEN PURP 300V 5A DPAK |
2751 | 1.72 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 300 V | 300 V | 5A | -55°C ~ 175°C | 1.05 V @ 5 A | ||
|
1N6483-E3/96DIODE GEN PURP 800V 1A DO213AB |
2319 | 0.48 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
V8PM10S-M3/IDIODE SCHOTTKY 100V 8A TO277A |
2612 | 0.58 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 8A | -40°C ~ 175°C | 780 mV @ 8 A | ||
|
FFSB0865B650V 8A SIC SBD GEN1.5 |
2804 | 3.64 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 336pF @ 1V, 100kHz | - | 40 µA @ 650 V | 650 V | 10.1A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |||
|
SS16RECTIFIER, SCHOTTKY, 1A, 60V |
2184 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -65°C ~ 125°C | 700 mV @ 1 A | |||
|
STTH110DIODE GEN PURP 1KV 1A DO41 |
2507 | 0.43 |
Arabaya ekleİstem şimdi |
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | 175°C (Max) | 1.7 V @ 1 A | |||
|
MBR760-E3/45DIODE SCHOTTKY 60V 7.5A TO220AC |
3984 | 1.00 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 7.5A | -65°C ~ 175°C | 750 mV @ 7.5 A | |||
|
GL34D-E3/83DIODE GEN PURP 200V 500MA DO213 |
3072 | 0.44 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA | ||
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|
V8PA10-M3/IDIODE SCHOTTKY 100V 8A DO221BC |
2400 | 0.58 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 850pF @ 4V, 1MHz | - | 800 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 760 mV @ 8 A | ||
|
|
STPSC12065G-TRSILICON CARBIDE DIODES |
2048 | 3.96 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 750pF @ 0V, 1MHz | 0 ns | 150 µA @ 650 V | 650 V | 12A | -40°C ~ 175°C | 1.45 V @ 12 A |
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