Fotoğraf | Mfr. Bölüm # | Stock | Ödül | Kıymet | Veri sayfası | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STTH806G-TRDIODE GEN PURP 600V 8A D2PAK |
2804 | 2.30 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 8 µA @ 600 V | 600 V | 8A | 175°C (Max) | 1.85 V @ 8 A | ||||
IDH08G65C5XKSA2DIODE SCHOTTKY 650V 8A TO220-2-1 |
2063 | 4.11 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |||
S2MGF_R1_00001SURFACE MOUNT RECTIFIER |
3907 | 0.45 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||||
ES1JLW RVGDIODE GEN PURP 600V 1A SOD123W |
3343 | 0.47 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | ||||
BYG10Y-M3/TRDIODE AVALANCHE 1.6KV 1.5A |
2440 | 0.51 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | ||||
GI250-4-E3/54DIODE GEN PURP 4KV 250MA DO204 |
2994 | 0.61 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 4000 V | 4000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA | |||
VS-ETH0806FP-M3DIODE GEN PURP 600V 8A TO220-2 |
2940 | 1.25 |
Arabaya ekleİstem şimdi |
Datenblatt |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 21 ns | 12 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.65 V @ 8 A | |||
STPSC10H065DDIODE SCHOTTKY 650V 10A TO220AC |
3720 | 4.15 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 480pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.75 V @ 10 A | ||||
PMEG100T10ELRXPMEG100T10ELR/SOD123W/SOD2 |
3779 | 0.43 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 1V, 1MHz | 11.5 ns | 900 nA @ 100 V | 100 V | 1A | 175°C | 750 mV @ 1 A | ||||
SS315LW RVGDIODE SCHOTTKY 150V 3A SOD123W |
2085 | 0.47 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||||
VSSB410S-M3/52TDIODE SCHOTTKY 100V 1.9A DO214AA |
3733 | 0.49 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 250 µA @ 100 V | 100 V | 1.9A (DC) | -40°C ~ 150°C | 770 mV @ 4 A | |||
RS3MB-T R5G150NS 3A 1000V FAST RECOVERY REC |
3331 | 0.51 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | ||||
STPSC4H065DLFSILICON CARBIDE DIODES |
3456 | 2.32 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 245pF @ 0V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 4A | -40°C ~ 175°C | 1.55 V @ 4 A | |||
STTH3010WYDIODE GEN PURP 1KV 30A DO247-2 |
3285 | 4.21 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 15 µA @ 1000 V | 1000 V | 30A | -40°C ~ 175°C | 2 V @ 30 A | |||
ES1CWG_R1_00001SURFACE MOUNT SUPER FAST RECOVER |
2056 | 0.45 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |||||
NRVBA340NT3GDIODE SCHOTTKY 3A 40V 1201 SMA2 |
2426 | 0.44 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 450 mV @ 3 A | |||
S5JHE3_A/IDIODE GEN PURP 600V 5A DO214AB |
3962 | 0.58 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |||
STPS340SDIODE SCHOTTKY 40V 3A SMC |
2534 | 0.58 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 40 V | 40 V | 3A | 150°C (Max) | 630 mV @ 3 A | ||||
VS-15ETH03S-M3DIODE GEN PURP 300V 15A TO263AB |
2782 | 1.27 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A | |||
SCS220AEGC11650V, 20A, 3-PIN THD, SILICON-CA |
2310 | 4.42 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 730pF @ 1V, 1MHz | 0 ns | 400 µA @ 600 V | 650 V | 20A (DC) | 175°C | 1.55 V @ 20 A |
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