Fotoğraf | Mfr. Bölüm # | Stock | Ödül | Kıymet | Veri sayfası | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SS2FL4HM3/HDIODE SCHOTTKY 40V 2A DO-219AB |
3581 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 4V, 1MHz | - | 220 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 580 mV @ 2 A | |||
NTE541R-SI 12KV MICRO OVEN RECT |
3006 | 11.48 |
Arabaya ekleİstem şimdi |
Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 5 µA @ 12000 V | 12000 V | 1A | 120°C (Max) | 18 V @ 1 A | ||||
SS1P6LHM3/85ADIODE SCHOTTKY 60V 1A DO220AA |
2286 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 590 mV @ 1 A | |||
BAL99E6433HTMA1DIODE GEN PURP 80V 250MA SOT23-3 |
120000 | 0.02 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 1 µA @ 70 V | 80 V | 250mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA | ||||
UF4004 R0GDIODE GEN PURP 400V 1A DO204AL |
2413 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | ||||
ES2JWF-HFRECTIFIER SUPER FAST RECOVERY 60 |
3206 | 0.08 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.68 V @ 2 A | ||||
NRVBA140NT3GDIODE SCHOTTKY 1A 40V 1201 SMA2 |
2792 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |||
GD30MPS12HDIODE SCHOTTKY 1200V 30A TO-247- |
2344 | 11.48 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | SiC Schottky MPS™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1101pF @ 1V, 1MHz | - | 20 µA @ 1200 V | 1200 V | 55A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A | |||
S07M-M-18DIODE GEN PURP 1KV 700MA DO219AB |
3342 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |||
BAL74E6327HTSA1DIODE GEN PURP 50V 250MA SOT23-3 |
3679 | 0.03 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 250mA (DC) | -65°C ~ 150°C | 1 V @ 100 mA | ||||
UF4005 R0GDIODE GEN PURP 600V 1A DO204AL |
2367 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | ||||
RS2AB-HFRECTIFIER FAST RECOVERY 50V 2A S |
2801 | 0.08 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |||||
SBRS8140NT3GDIODE SCHOTTKY 40V 1A 1202-SMB2 |
2903 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |||
MBRP40030CTLRECTIFIER DIODE, SCHOTTKY |
2111 | 12.33 |
Arabaya ekleİstem şimdi |
Datenblatt |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||||
SS26SHE3_B/IDIODE SCHOTTKY 60V 2A DO214AC |
3847 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | - | |||
BAL99E6327HTSA1DIODE GEN PURP 80V 250MA SOT23-3 |
2901 | 0.02 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 1 µA @ 70 V | 80 V | 250mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA | ||||
S3KB-HFRECTIFIER GEN PURP 800V 3A SMB |
2965 | 0.09 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 35pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |||||
RS2JB-HFRECTIFIER FAST RECOVERY 600V 2A |
2120 | 0.08 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |||||
HER204G R0GDIODE GEN PURP 300V 2A DO204AC |
3708 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | ||||
GD15MPS17H1700V 15A TO-247-2 SIC SCHOTTKY |
2178 | 12.40 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.082nF @ 1V, 1MHz | 0 ns | 20 µA @ 1700 V | 1700 V | 36A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A |
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