Fotoğraf | Mfr. Bölüm # | Stock | Ödül | Kıymet | Veri sayfası | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MUR115S M4GDIODE GEN PURP 150V 1A DO214AA |
3700 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | ||||
RL105FTADIODE GEN PURP 600V 1A A-405 |
2202 | 0.02 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | ||||
U2D-M3/5BTDIODE GEN PURP 200V 2A DO214AA |
3909 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 27 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | ||||
US1KHE3_A/IDIODE GEN PURP 800V 1A DO214AC |
2942 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |||
SK35B-TPDIODE SCHOTTKY 50V 3A DO214AA |
2981 | 0.11 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 125°C | 750 mV @ 3 A | ||||
RS1K-HFRECTIFIER FAST RECOVERY 800V 1A |
2078 | 0.06 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |||||
MUR120S M4GDIODE GEN PURP 200V 1A DO214AA |
3449 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | ||||
RL106FTADIODE GEN PURP 800V 1A A-405 |
3012 | 0.02 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | ||||
AR1PD-M3/85ADIODE AVALANCHE 200V 1A DO220AA |
2713 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |||
NRVUA110VT3GDIODE GEN PURP 100V 2A SMA |
2528 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A | |||
SK36B-TPDIODE SCHOTTKY 60V 3A DO214AA |
2501 | 0.52 |
Arabaya ekleİstem şimdi |
Datenblatt |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 125°C | 750 mV @ 3 A | ||||
RS1A-HFRECTIFIER FAST RECOVERY 50V 1A S |
2919 | 0.06 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |||||
MUR140S M4GDIODE GEN PURP 400V 1A DO214AA |
3094 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 150 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | ||||
RL107FTADIODE GEN PURP 1KV 1A A-405 |
2712 | 0.02 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | ||||
AR1PG-M3/85ADIODE AVALANCHE 400V 1A DO220AA |
2277 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |||
MURS160-M3/5BTDIODE GEN PURP 600V 1A DO214AA |
3251 | 0.12 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | ||||
SK35B-LTPDIODE SCHOTTKY 50V 3A DO214AA |
3424 | 0.52 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | ||||
S2G-HFRECTIFIER GEN PURP 400V 2A SMA |
3365 | 0.06 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||||
MUR160S M4GDIODE GEN PURP 600V 1A DO214AA |
2552 | 0.10 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 150 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | ||||
BAV16WTRDIODE GEN PURP 75V 150MA SOD123 |
2666 | 0.02 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 150mA | -65°C ~ 150°C | 855 mV @ 10 mA |
Telefon