Diodes-Rectifiers-Single - Element (Hong Kong) Technology Co., Ltd.

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Mfr. Bölüm #	Stock	Ödül	Kıymet	Veri sayfası	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
ES2LD M4G DIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation	3946	0.12	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	25pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	2A	-55°C ~ 150°C	940 mV @ 2 A
SD103CW-G3-08 DIODE SCHOTTKY 350MA 20V SOD123 Vishay General Semiconductor - Diodes Division	2243	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	50pF @ 0V, 1MHz	10 ns	5 µA @ 10 V	20 V	350mA (DC)	-55°C ~ 150°C	600 mV @ 200 mA
V1FM10-M3/I 1A 100V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division	3375	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	95pF @ 4V, 1MHz	-	50 µA @ 100 V	100 V	1A	-40°C ~ 175°C	770 mV @ 1 A
MPG06B-E3/53 DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division	2147	0.15	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	600 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
1N6481HE3/97 DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division	2609	0.13	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	-	10 µA @ 400 V	400 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
ES2LG M4G DIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation	2606	0.12	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
PR1502-T DIODE GEN PURP 100V 1.5A DO15 Diodes Incorporated	3201	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	150 ns	5 µA @ 100 V	100 V	1.5A	-65°C ~ 150°C	1.2 V @ 1.5 A
V1FL45-M3/I 1A 45V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division	2186	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	190pF @ 4V, 1MHz	-	250 µA @ 60 V	45 V	1A	-40°C ~ 150°C	530 mV @ 1 A
MPG06D-E3/53 DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division	3327	0.15	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	600 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
1N6482HE3/97 DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division	2079	0.13	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	-	10 µA @ 600 V	600 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
AS01V1 DIODE GEN PURP 400V 600MA AXIAL Sanken	2415	0.15	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 400 V	400 V	600mA	-40°C ~ 150°C	1.5 V @ 600 mA
ES2LJ M4G DIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation	3838	0.12	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SBA140AS-AU_R1_000A1 SOD-123, SKY Panjit International Inc.	3945	0.36	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	1A	-55°C ~ 150°C	510 mV @ 1 A
V1FM12-M3/I 1A 120V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division	2209	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	95pF @ 4V, 1MHz	-	65 µA @ 120 V	120 V	1A	-40°C ~ 175°C	870 mV @ 1 A
MPG06G-E3/53 DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division	3212	0.15	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	600 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
1N6483HE3/97 DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division	3434	0.13	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	-	10 µA @ 800 V	800 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
AS01WK DIODE GEN PURP 400V 600MA AXIAL Sanken	3535	0.15	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 400 V	400 V	600mA	-40°C ~ 150°C	1.5 V @ 600 mA
UF1005-M3/54 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	3369	0.12	- + Arabaya ekle İstem şimdi		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1A	-65°C ~ 180°C	1.7 V @ 1 A
CDBV3-40-G DIODE SCHOTTKY 40V 200MA SOT323 Comchip Technology	2243	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	5pF @ 0V, 1MHz	5 ns	200 nA @ 30 V	40 V	200mA	125°C (Max)	1 V @ 40 mA
V1FM12-M3/H 1A 120V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division	3109	0.06	- + Arabaya ekle İstem şimdi	Datenblatt	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	95pF @ 4V, 1MHz	-	65 µA @ 120 V	120 V	1A	-40°C ~ 175°C	870 mV @ 1 A

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