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| Fotoğraf | Mfr. Bölüm # | Stock | Ödül | Kıymet | Veri sayfası | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS315F-HFDIODE SCHOTTKY 3A 150V SMAF |
3334 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 300 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |||
|
GP10-4007-E3/54DIODE GEN PURP 1KV 1A DO204AL |
2520 | 0.18 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 1000 V | 1A | - | - | |||
|
|
SSB44HDIODE SCHOTTKY 40V 4A DO214AA |
2599 | 0.18 |
Arabaya ekleİstem şimdi |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 235pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 4A (DC) | -55°C ~ 150°C | 500 mV @ 4 A | |||
|
ESH2CHE3_A/HDIODE GEN PURP 150V 2A DO214AA |
3436 | 0.16 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 25 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | ||
|
|
SJPL-L4VLDIODE GEN PURP 400V 3A 2SMD |
3384 | 0.19 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.3 V @ 3 A | |||
|
SS15-E3/5ATDIODE SCHOTTKY 50V 1A DO214AC |
2610 | 0.08 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 750 mV @ 1 A | |||
|
SK23AHM2GDIODE SCHOTTKY 30V 2A DO214AC |
2900 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | ||
|
|
GP10A-E3/54DIODE GEN PURP 50V 1A DO204AL |
2668 | 0.18 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
MBR440MFST1GDIODE SCHOTTKY 40V 4A 5DFN |
6500 | 0.18 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 40 V | 40 V | 4A | -55°C ~ 175°C | 650 mV @ 4 A | |||
|
|
ESH2CHE3_A/IDIODE GEN PURP 150V 2A DO214AA |
2641 | 0.16 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 25 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | ||
|
|
SJPX-H6VLDIODE GEN PURP 600V 2A 2SMD |
3202 | 0.19 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 600 V | 600 V | 2A | -40°C ~ 150°C | 1.5 V @ 2 A | |||
|
GPP20B-E3/54DIODE GEN PURP 100V 2A DO204AC |
2086 | 0.08 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
|
|
SK24AHM2GDIODE SCHOTTKY 40V 2A DO214AC |
2824 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | ||
|
|
GP10B-E3/54DIODE GEN PURP 100V 1A DO204AL |
3860 | 0.18 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
|
SD060SC200A.T2PIV 200V IO 3A CHIP SIZE 60MIL S |
2830 | 0.18 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 5V, 1MHz | - | 70 µA @ 200 V | 200 V | 3A | -55°C ~ 200°C | 920 mV @ 3 A | |||
|
|
ESH2DHE3_A/IDIODE GEN PURP 200V 2A DO214AA |
2568 | 0.16 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | ||
|
SDT5H100P5-7DDIODE SCHOTTKY 100V 5A POWERDI 5 |
2352 | 0.19 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 620 mV @ 5 A | |||
|
|
ES1B M2GDIODE GEN PURP 100V 1A DO214AC |
2057 | 0.08 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 1V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |||
|
|
SK26AHM2GDIODE SCHOTTKY 60V 2A DO214AC |
3228 | 0.09 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | ||
|
|
GP10D-E3/54DIODE GEN PURP 200V 1A DO204AL |
3969 | 0.18 |
Arabaya ekleİstem şimdi |
Datenblatt |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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