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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
SD5000N PDIP 16L

SD5000N PDIP 16L

QUAD HIGH SPEED N-CHANNEL LATERA

Linear Integrated Systems, Inc.

919 6.89
- +

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SD5000N PDIP 16L

Datenblatt

Tube - Active 4 N-Channel Standard 20V 50mA (Ta) 70Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) Through Hole
3N166 TO-99 6L

3N166 TO-99 6L

MONOLITHIC DUAL, P-CHANNEL ENHAN

Linear Integrated Systems, Inc.

3522 11.18
- +

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3N166 TO-99 6L

Datenblatt

Bulk - Active 2 P-Channel (Dual) Standard 30V 50mA (Ta) 300Ohm @ 100µA, 20V 5V @ 10µA - - 300mW (Ta) -55°C ~ 150°C Through Hole
3N165 TO-99 6L

3N165 TO-99 6L

MONOLITHIC DUAL, P-CHANNEL ENHAN

Linear Integrated Systems, Inc.

2320 11.81
- +

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3N165 TO-99 6L

Datenblatt

Bulk - Active 2 P-Channel (Dual) Standard 40V 50mA (Ta) 300Ohm @ 100µA, 20V 5V @ 10µA - - 300mW (Ta) -55°C ~ 150°C Through Hole
3N190 TO-78 7L

3N190 TO-78 7L

MONOLITHIC DUAL, N-CHANNEL ENHAN

Linear Integrated Systems, Inc.

196 12.43
- +

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3N190 TO-78 7L

Datenblatt

Bulk - Active 2 P-Channel (Dual) Standard 40V 50mA 300Ohm @ 100µA, 20V 5V @ 10µA - - 525mW (Ta) -55°C ~ 135°C (TJ) Through Hole
FPF1C2P5BF07A

FPF1C2P5BF07A

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

433 71.43
- +

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FPF1C2P5BF07A

Datenblatt

Bulk - Active 5 N-Channel (Solar Inverter) Standard 650V 36A 90mOhm @ 27A, 10V 3.8V @ 250µA - - 250W -40°C ~ 150°C (TJ) Chassis Mount
BSM250D17P2E004

BSM250D17P2E004

HALF BRIDGE MODULE CONSISTING OF

Rohm Semiconductor

3367 1180.80
- +

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BSM250D17P2E004

Datenblatt

Box - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 250A (Tc) - 4V @ 66mA - 30000pF @ 10V 1800W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
FS45MR12W1M1B11BOMA1

FS45MR12W1M1B11BOMA1

MOSFET MODULE 1200V 50A

Infineon Technologies

2950 147.28
- +

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FS45MR12W1M1B11BOMA1

Datenblatt

Tray CoolSiC™+ Last Time Buy 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V 20mW (Tc) -40°C ~ 150°C (TJ) Chassis Mount
BSM080D12P2C008

BSM080D12P2C008

SIC POWER MODULE-1200V-80A

Rohm Semiconductor

2074 382.48
- +

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BSM080D12P2C008

Datenblatt

Tray - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 80A (Tc) - 4V @ 13.2mA - 800pF @ 10V 600W 175°C (TJ) Chassis Mount
BSM120D12P2C005

BSM120D12P2C005

MOSFET 2N-CH 1200V 120A MODULE

Rohm Semiconductor

2088 441.32
- +

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BSM120D12P2C005

Datenblatt

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 120A (Tc) - 2.7V @ 22mA - 14000pF @ 10V 780W -40°C ~ 150°C (TJ) -
SSM6L35FE,LM

SSM6L35FE,LM

MOSFET N/P-CH 20V 0.18A/0.1A ES6

Toshiba Semiconductor and Storage

741 0.43
- +

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SSM6L35FE,LM

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Logic Level Gate 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 150mW 150°C (TJ) Surface Mount
ZXMC3F31DN8TA

ZXMC3F31DN8TA

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

Diodes Incorporated

500 0.78
- +

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ZXMC3F31DN8TA

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Logic Level Gate, 4.5V Drive 30V 6.8A, 4.9A 24mOhm @ 7A, 10V 3V @ 250µA 12.9nC @ 10V 608pF @ 15V 1.8W -55°C ~ 150°C (TJ) Surface Mount
ZXMN6A09DN8TA

ZXMN6A09DN8TA

MOSFET 2N-CH 60V 4.3A 8-SOIC

Diodes Incorporated

2038 2.04
- +

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ZXMN6A09DN8TA

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 60V 4.3A 40mOhm @ 8.2A, 10V 3V @ 250µA 24.2nC @ 5V 1407pF @ 40V 1.25W -55°C ~ 150°C (TJ) Surface Mount
ALD1115PAL

ALD1115PAL

MOSFET N/P-CH 10.6V 8DIP

Advanced Linear Devices Inc.

2006 4.96
- +

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ALD1115PAL

Datenblatt

Tube - Active N and P-Channel Complementary Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110900APAL

ALD110900APAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.

3253 7.12
- +

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ALD110900APAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110800APCL

ALD110800APCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.

2345 8.35
- +

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ALD110800APCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
MSCSM120AM08CT3AG

MSCSM120AM08CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology

2459 529.47
- +

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MSCSM120AM08CT3AG

Datenblatt

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 4mA 928nC @ 20V 12.08pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
BSM180D12P2E002

BSM180D12P2E002

1200V, 204A, HALF BRIDGE, SILICO

Rohm Semiconductor

3883 811.80
- +

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BSM180D12P2E002

Datenblatt

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 18000pF @ 10V 1360W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
BSM300D12P3E005

BSM300D12P3E005

SILICON CARBIDE POWER MODULE. B

Rohm Semiconductor

2760 1645.72
- +

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BSM300D12P3E005

Datenblatt

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 300A (Tc) - 5.6V @ 91mA - 14000pF @ 10V 1260W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
BSM600D12P3G001

BSM600D12P3G001

1200V, 576A, HALF BRIDGE, FULL S

Rohm Semiconductor

2330 2142.00
- +

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BSM600D12P3G001

Datenblatt

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 600A (Tc) - 5.6V @ 182mA - 31000pF @ 10V 2450W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
FF2MR12KM1PHOSA1

FF2MR12KM1PHOSA1

MEDIUM POWER 62MM

Infineon Technologies

3661 1070.68
- +

Arabaya ekle

İstem şimdi

FF2MR12KM1PHOSA1

Datenblatt

Tray CoolSiC™ Last Time Buy 2 N-Channel (Half Bridge) Standard 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) Chassis Mount
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