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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK39N60W5,S1VF

TK39N60W5,S1VF

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

3615 8.50
- +

Arabaya ekle

İstem şimdi

TK39N60W5,S1VF

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 74mOhm @ 19.4A, 10V 4.5V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) Through Hole
UJ3C065080K3S

UJ3C065080K3S

MOSFET N-CH 650V 31A TO247-3

UnitedSiC

464 8.51
- +

Arabaya ekle

İstem şimdi

UJ3C065080K3S

Datenblatt

Tube - Active N-Channel - 650 V 31A (Tc) 12V 111mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH14N85X

IXFH14N85X

MOSFET N-CH 850V 14A TO247-3

IXYS

245 8.56
- +

Arabaya ekle

İstem şimdi

IXFH14N85X

Datenblatt

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW24N60C3FKSA1

SPW24N60C3FKSA1

MOSFET N-CH 650V 24.3A TO247-3

Infineon Technologies

2535 8.56
- +

Arabaya ekle

İstem şimdi

SPW24N60C3FKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24.3A (Tc) 10V 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 135 nC @ 10 V ±20V 3000 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP32P20T

IXTP32P20T

MOSFET P-CH 200V 32A TO220AB

IXYS

300 8.74
- +

Arabaya ekle

İstem şimdi

IXTP32P20T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065080K4S

UF3C065080K4S

MOSFET N-CH 650V 31A TO247-4

UnitedSiC

8689 8.79
- +

Arabaya ekle

İstem şimdi

UF3C065080K4S

Datenblatt

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW20N95DK5

STW20N95DK5

MOSFET N-CH 950V 18A TO247

STMicroelectronics

176 9.00
- +

Arabaya ekle

İstem şimdi

STW20N95DK5

Datenblatt

Tube MDmesh™ DK5 Active N-Channel MOSFET (Metal Oxide) 950 V 18A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 50.7 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N100P

IXFH12N100P

MOSFET N-CH 1000V 12A TO247AD

IXYS

196 9.36
- +

Arabaya ekle

İstem şimdi

IXFH12N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4080 pF @ 25 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP32N50KPBF

IRFP32N50KPBF

MOSFET N-CH 500V 32A TO247-3

Vishay Siliconix

241 9.54
- +

Arabaya ekle

İstem şimdi

IRFP32N50KPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 160mOhm @ 32A, 10V 5V @ 250µA 190 nC @ 10 V ±30V 5280 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW56N60M2-4

STW56N60M2-4

MOSFET N-CH 600V 52A TO247-4L

STMicroelectronics

555 9.57
- +

Arabaya ekle

İstem şimdi

STW56N60M2-4

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 55mOhm @ 26A, 10V 4V @ 250µA 91 nC @ 10 V ±25V 3750 pF @ 100 V - 350W (Tc) 150°C (TJ) Through Hole
FDH50N50-F133

FDH50N50-F133

MOSFET N-CH 500V 48A TO247-3

onsemi

129 9.63
- +

Arabaya ekle

İstem şimdi

FDH50N50-F133

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0160120J

C3M0160120J

SICFET N-CH 1200V 17A TO263-7

Wolfspeed, Inc.

4286 10.00
- +

Arabaya ekle

İstem şimdi

C3M0160120J

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 15V 208mOhm @ 8.5A, 15V 3.6V @ 2.33mA 24 nC @ 15 V +15V, -4V 632 pF @ 1000 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHW47N60E-GE3

SIHW47N60E-GE3

MOSFET N-CH 600V 47A TO247AD

Vishay Siliconix

287 10.21
- +

Arabaya ekle

İstem şimdi

SIHW47N60E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N80P

IXFH20N80P

MOSFET N-CH 800V 20A TO247AD

IXYS

194 10.35
- +

Arabaya ekle

İstem şimdi

IXFH20N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 520mOhm @ 10A, 10V 5V @ 4mA 86 nC @ 10 V ±30V 4685 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP26N60LPBF

IRFP26N60LPBF

MOSFET N-CH 600V 26A TO247-3

Vishay Siliconix

1986 10.47
- +

Arabaya ekle

İstem şimdi

IRFP26N60LPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 5020 pF @ 25 V - 470W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG100N60E-GE3

SIHG100N60E-GE3

MOSFET N-CH 600V 30A TO247AC

Vishay Siliconix

392 6.87
- +

Arabaya ekle

İstem şimdi

SIHG100N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R099CPAFKSA1

IPW60R099CPAFKSA1

MOSFET N-CH 600V 31A TO247-3

Infineon Technologies

143 10.54
- +

Arabaya ekle

İstem şimdi

IPW60R099CPAFKSA1

Datenblatt

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 105mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -40°C ~ 150°C (TJ) Through Hole
FCA47N60F

FCA47N60F

MOSFET N-CH 600V 47A TO3PN

onsemi

362 10.55
- +

Arabaya ekle

İstem şimdi

FCA47N60F

Datenblatt

Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 73mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C120150K4S

UF3C120150K4S

SICFET N-CH 1200V 18.4A TO247-4

UnitedSiC

325 10.55
- +

Arabaya ekle

İstem şimdi

UF3C120150K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 18.4A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 25.7 nC @ 12 V ±25V 738 pF @ 100 V - 166.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH46N65X2

IXFH46N65X2

MOSFET N-CH 650V 46A TO247

IXYS

2697 10.56
- +

Arabaya ekle

İstem şimdi

IXFH46N65X2

Datenblatt

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 76mOhm @ 23A, 10V 5.5V @ 4mA 75 nC @ 10 V ±30V 4810 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
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