Hoş geldiniz. Element (Hong Kong) Technology Co., Ltd.!

+86 15361839241 0755-23603516
Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL2910STRLPBF

IRL2910STRLPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies

2965 3.88
- +

Arabaya ekle

İstem şimdi

IRL2910STRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3415PBF

IRF3415PBF

MOSFET N-CH 150V 43A TO220AB

Infineon Technologies

11254 2.44
- +

Arabaya ekle

İstem şimdi

IRF3415PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP150NPBF

IRFP150NPBF

MOSFET N-CH 100V 42A TO247AC

Infineon Technologies

15206 2.46
- +

Arabaya ekle

İstem şimdi

IRFP150NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 23A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB060AN08A0

FDB060AN08A0

MOSFET N-CH 75V 16A/80A D2PAK

onsemi

2950 3.97
- +

Arabaya ekle

İstem şimdi

FDB060AN08A0

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 16A (Ta), 80A (Tc) 6V, 10V 6mOhm @ 80A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 5150 pF @ 25 V - 255W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB035N08N3GATMA1

IPB035N08N3GATMA1

MOSFET N-CH 80V 100A D2PAK

Infineon Technologies

2668 4.53
- +

Arabaya ekle

İstem şimdi

IPB035N08N3GATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC040N10NS5SCATMA1

BSC040N10NS5SCATMA1

MOSFET N-CH 100V 140A WSON-8

Infineon Technologies

10642 4.55
- +

Arabaya ekle

İstem şimdi

BSC040N10NS5SCATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 6V, 10V 4mOhm @ 50A, 10V 3.8V @ 95µA 72 nC @ 10 V ±20V 5300 pF @ 50 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

MOSFET N-CH 100V 9A/83A 2WDSON

Infineon Technologies

27102 4.46
- +

Arabaya ekle

İstem şimdi

BSB056N10NN3GXUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 83A (Tc) 6V, 10V 5.6mOhm @ 30A, 10V 3.5V @ 100µA 74 nC @ 10 V ±20V 5500 pF @ 50 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF8736M2TR

AUIRF8736M2TR

MOSFET N-CH 40V 27A DIRECTFET

Infineon Technologies

13601 4.81
- +

Arabaya ekle

İstem şimdi

AUIRF8736M2TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 137A (Tc) 10V 1.9mOhm @ 85A, 10V 3.9V @ 150µA 204 nC @ 10 V ±20V 6867 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3206PBF

IRFB3206PBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies

8820 2.66
- +

Arabaya ekle

İstem şimdi

IRFB3206PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4905PBF

IRF4905PBF

MOSFET P-CH 55V 74A TO220AB

Infineon Technologies

91681 2.67
- +

Arabaya ekle

İstem şimdi

IRF4905PBF

Datenblatt

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
EPC2067

EPC2067

TRANS GAN .0015OHM 40V 14LGA

EPC

6738 5.10
- +

Arabaya ekle

İstem şimdi

EPC2067

Datenblatt

Tape & Reel (TR),Cut Tape (CT) * Active N-Channel GaNFET (Gallium Nitride) 40 V 69A (Ta) 5V 1.55mOhm @ 37A, 5V 2.5V @ 18mA 22.3 nC @ 5 V +6V, -4V 3267 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
IXTA08N100D2

IXTA08N100D2

MOSFET N-CH 1000V 800MA TO263

IXYS

5035 2.71
- +

Arabaya ekle

İstem şimdi

IXTA08N100D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) - 21Ohm @ 400mA, 0V - 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740ASPBF

IRF740ASPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix

779 2.72
- +

Arabaya ekle

İstem şimdi

IRF740ASPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMT80080DC

FDMT80080DC

MOSFET N-CH 80V 36A/254A 8DUAL

onsemi

9370 5.43
- +

Arabaya ekle

İstem şimdi

FDMT80080DC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 36A (Ta), 254A (Tc) 8V, 10V 1.35mOhm @ 36A, 10V 4V @ 250µA 273 nC @ 10 V ±20V 20720 pF @ 40 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4321TRLPBF

IRFS4321TRLPBF

MOSFET N-CH 150V 85A D2PAK

Infineon Technologies

9249 4.40
- +

Arabaya ekle

İstem şimdi

IRFS4321TRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3207TRLPBF

IRFS3207TRLPBF

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies

1480 4.44
- +

Arabaya ekle

İstem şimdi

IRFS3207TRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY01N100

IXTY01N100

MOSFET N-CH 1000V 100MA TO252AA

IXYS

7059 2.80
- +

Arabaya ekle

İstem şimdi

IXTY01N100

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 100mA (Tc) 10V 80Ohm @ 100mA, 10V 4.5V @ 25µA 6.9 nC @ 10 V ±20V 54 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL2505PBF

IRL2505PBF

MOSFET N-CH 55V 104A TO220AB

Infineon Technologies

11333 2.80
- +

Arabaya ekle

İstem şimdi

IRL2505PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDBL86210-F085

FDBL86210-F085

MOSFET N-CH 150V 169A 8HPSOF

onsemi

466 5.38
- +

Arabaya ekle

İstem şimdi

FDBL86210-F085

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 169A (Tc) 10V 6.3mOhm @ 80A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 5805 pF @ 75 V - 500W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IRF5210PBF

IRF5210PBF

MOSFET P-CH 100V 40A TO220AB

Infineon Technologies

27227 2.87
- +

Arabaya ekle

İstem şimdi

IRF5210PBF

Datenblatt

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 2728293031323334...2123Next»
Bir site iste
Bölüm numarası
Kıymet
Kontakt
E-posta
Şerhler
  • Ev.

    Ev.

    PRODUKT

    Yapılar

    Telefon

    Telefon

    USER

    USER