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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQAF16N25

FQAF16N25

MOSFET N-CH 250V 12.4A TO3PF

Fairchild Semiconductor

682 0.85
- +

Arabaya ekle

İstem şimdi

FQAF16N25

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 12.4A (Tc) 10V 230mOhm @ 6.2A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1200 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0351DPA-WS#J0

RJK0351DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

410 0.85
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
FQAF16N25C

FQAF16N25C

MOSFET N-CH 250V 11.4A TO3PF

Fairchild Semiconductor

360 0.85
- +

Arabaya ekle

İstem şimdi

FQAF16N25C

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 11.4A (Tc) 10V 270mOhm @ 5.7A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2790GR-E1-A

UPA2790GR-E1-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

10000 0.87
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
RF1S50N06SM9A

RF1S50N06SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9898 0.87
- +

Arabaya ekle

İstem şimdi

RF1S50N06SM9A

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75332P3

HUF75332P3

MOSFET N-CH 55V 60A TO220-3

Harris Corporation

9713 0.87
- +

Arabaya ekle

İstem şimdi

HUF75332P3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N306AD3

ISL9N306AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8004 0.87
- +

Arabaya ekle

İstem şimdi

ISL9N306AD3

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) Through Hole
UPA2719GR-E2-AT

UPA2719GR-E2-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

7500 0.87
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
UPA2719GR-E2-A

UPA2719GR-E2-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

5000 0.87
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
UPA2790GR-E2-A

UPA2790GR-E2-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2500 0.87
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
2SJ325-AZ

2SJ325-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

2478 0.87
- +

Arabaya ekle

İstem şimdi

2SJ325-AZ

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
RJK0381DPA-WS#J53

RJK0381DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2110 0.87
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
RJK0381DPA-00#J5A

RJK0381DPA-00#J5A

MOSFET N-CH 30V 40A 8WPAK

Renesas Electronics America Inc

2000 0.87
- +

Arabaya ekle

İstem şimdi

RJK0381DPA-00#J5A

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) - 4.5mOhm @ 20A, 10V - 15 nC @ 4.5 V - 2200 pF @ 10 V - 45W (Tc) 150°C (TJ) Surface Mount
2SJ325-Z-E1-AY

2SJ325-Z-E1-AY

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

1829 0.87
- +

Arabaya ekle

İstem şimdi

2SJ325-Z-E1-AY

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RF1S45N06LESM9A

RF1S45N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation

1600 0.87
- +

Arabaya ekle

İstem şimdi

RF1S45N06LESM9A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF231

IRF231

N-CHANNEL POWER MOSFET

Harris Corporation

1234 0.87
- +

Arabaya ekle

İstem şimdi

IRF231

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTB3N60ET4

MTB3N60ET4

N-CHANNEL POWER MOSFET

onsemi

700 0.87
- +

Arabaya ekle

İstem şimdi

MTB3N60ET4

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF9543

IRF9543

P-CHANNEL POWER MOSFET

Harris Corporation

430 0.87
- +

Arabaya ekle

İstem şimdi

IRF9543

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 15A (Tc) 10V 300mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ325-AY

2SJ325-AY

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

425 0.87
- +

Arabaya ekle

İstem şimdi

2SJ325-AY

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
2SJ325-Z-AY

2SJ325-Z-AY

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

381 0.87
- +

Arabaya ekle

İstem şimdi

2SJ325-Z-AY

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
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