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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH340N075T2

IXFH340N075T2

MOSFET N-CH 75V 340A TO247AD

IXYS

306 12.31
- +

Arabaya ekle

İstem şimdi

IXFH340N075T2

Datenblatt

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V ±20V 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R160MT17D

G3R160MT17D

SIC MOSFET N-CH 21A TO247-3

GeneSiC Semiconductor

539 12.97
- +

Arabaya ekle

İstem şimdi

G3R160MT17D

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 21A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH50N30Q3

IXFH50N30Q3

MOSFET N-CH 300V 50A TO247AD

IXYS

2992 13.29
- +

Arabaya ekle

İstem şimdi

IXFH50N30Q3

Datenblatt

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 80mOhm @ 25A, 10V 6.5V @ 4mA 65 nC @ 10 V ±20V 3160 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065030B3

UF3C065030B3

MOSFET N-CH 650V 65A TO263

UnitedSiC

3676 19.39
- +

Arabaya ekle

İstem şimdi

UF3C065030B3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 65A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 242W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R160MT17J

G3R160MT17J

SIC MOSFET N-CH 22A TO263-7

GeneSiC Semiconductor

1690 13.75
- +

Arabaya ekle

İstem şimdi

G3R160MT17J

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 22A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R037P7XKSA1

IPW60R037P7XKSA1

MOSFET N-CH 650V 76A TO247-3

Infineon Technologies

4135 13.92
- +

Arabaya ekle

İstem şimdi

IPW60R037P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDL100N50F

FDL100N50F

MOSFET N-CH 500V 100A TO264-3

onsemi

5143 14.08
- +

Arabaya ekle

İstem şimdi

FDL100N50F

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 100A (Tc) 10V 55mOhm @ 50A, 10V 5V @ 250µA 238 nC @ 10 V ±30V 12000 pF @ 25 V - 2500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT120N25X3HV

IXFT120N25X3HV

MOSFET N-CH 250V 120A TO268HV

IXYS

1057 14.46
- +

Arabaya ekle

İstem şimdi

IXFT120N25X3HV

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UF3C120080K3S

UF3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC

19055 15.92
- +

Arabaya ekle

İstem şimdi

UF3C120080K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120080K3S

UJ3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC

9065 15.94
- +

Arabaya ekle

İstem şimdi

UJ3C120080K3S

Datenblatt

Tube - Not For New Designs N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120080K4S

UF3C120080K4S

SICFET N-CH 1200V 33A TO247-4

UnitedSiC

2852 15.94
- +

Arabaya ekle

İstem şimdi

UF3C120080K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R045C7FKSA1

IPW65R045C7FKSA1

MOSFET N-CH 650V 46A TO247-3

Infineon Technologies

155 16.22
- +

Arabaya ekle

İstem şimdi

IPW65R045C7FKSA1

Datenblatt

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R048M1HXKSA1

IMW65R048M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

1413 18.45
- +

Arabaya ekle

İstem şimdi

Tube - Active - - - 39A (Tc) - - - - - - - - - -
G3R40MT12D

G3R40MT12D

SIC MOSFET N-CH 71A TO247-3

GeneSiC Semiconductor

248 18.46
- +

Arabaya ekle

İstem şimdi

G3R40MT12D

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R40MT12K

G3R40MT12K

SIC MOSFET N-CH 71A TO247-4

GeneSiC Semiconductor

611 18.73
- +

Arabaya ekle

İstem şimdi

G3R40MT12K

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R40MT12J

G3R40MT12J

SIC MOSFET N-CH 75A TO263-7

GeneSiC Semiconductor

680 19.05
- +

Arabaya ekle

İstem şimdi

G3R40MT12J

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 374W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UJ4C075018K3S

UJ4C075018K3S

SICFET N-CH 750V 81A TO247-3

UnitedSiC

7535 19.12
- +

Arabaya ekle

İstem şimdi

UJ4C075018K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030T3S

UF3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC

5201 19.39
- +

Arabaya ekle

İstem şimdi

UF3C065030T3S

Datenblatt

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065030T3S

UJ3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC

1831 19.39
- +

Arabaya ekle

İstem şimdi

UJ3C065030T3S

Datenblatt

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075018K4S

UJ4C075018K4S

SICFET N-CH 750V 81A TO247-4

UnitedSiC

1756 19.59
- +

Arabaya ekle

İstem şimdi

UJ4C075018K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
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