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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SN74CBT16245DGG

SN74CBT16245DGG

IC 16-BIT FET BUS SW 48-TSSOP

Texas Instruments

4770 1.80
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
MTAJ50N05HDLFK

MTAJ50N05HDLFK

NFET T0220FP JPN

onsemi

935 1.80
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
IRFD320

IRFD320

MOSFET N-CH 400V 490MA 4HVMDIP

Harris Corporation

812 1.80
- +

Arabaya ekle

İstem şimdi

IRFD320

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 490mA (Ta) - 1.8Ohm @ 210mA, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
2SK1459LS

2SK1459LS

N-CHANNEL SILICON MOSFET

onsemi

1308 1.82
- +

Arabaya ekle

İstem şimdi

2SK1459LS

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BTS130-E3045A

BTS130-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies

814 1.82
- +

Arabaya ekle

İstem şimdi

BTS130-E3045A

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
IRFP352

IRFP352

N-CHANNEL POWER MOSFET

Harris Corporation

436 1.82
- +

Arabaya ekle

İstem şimdi

IRFP352

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 8.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N302AS3

ISL9N302AS3

MOSFET N-CH 30V 75A TO-262AA

Fairchild Semiconductor

400 1.82
- +

Arabaya ekle

İstem şimdi

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 2.3mOhm @ 75A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 11000 pF @ 15 V - 345W (Tc) - Through Hole
NP80N04PDG-E1B-AY

NP80N04PDG-E1B-AY

MOSFET N-CH 40V 80A TO263-3

Renesas Electronics America Inc

1000 1.84
- +

Arabaya ekle

İstem şimdi

NP80N04PDG-E1B-AY

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.5mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Surface Mount
NP80N04NLG-S18-AY

NP80N04NLG-S18-AY

MOSFET N-CH 40V 80A TO262

NEC Corporation

750 1.84
- +

Arabaya ekle

İstem şimdi

NP80N04NLG-S18-AY

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.8mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Through Hole
2SK972-94-E

2SK972-94-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

537 1.84
- +

Arabaya ekle

İstem şimdi

Bulk * Obsolete - - - - - - - - - - - - - -
NP80N04NDG-S18-AY

NP80N04NDG-S18-AY

MOSFET N-CH 40V 80A TO262

Renesas Electronics America Inc

400 1.84
- +

Arabaya ekle

İstem şimdi

NP80N04NDG-S18-AY

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.8mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Through Hole
NP80N03MLE-S18-AY

NP80N03MLE-S18-AY

MOSFET N-CH 30V 80A TO220

Renesas Electronics America Inc

300 1.84
- +

Arabaya ekle

İstem şimdi

NP80N03MLE-S18-AY

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) - 7mOhm @ 40A, 10V 2.5V @ 250µA 72 nC @ 10 V - 3900 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C (TJ) Through Hole
IPI65R190C

IPI65R190C

N-CHANNEL POWER MOSFET

Infineon Technologies

500 1.85
- +

Arabaya ekle

İstem şimdi

IPI65R190C

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ245L-E

2SJ245L-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

242 1.86
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
IXTJ4N150

IXTJ4N150

MOSFET N-CH 1500V 2.5A TO247

IXYS

3767 11.67
- +

Arabaya ekle

İstem şimdi

IXTJ4N150

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Tc) 10V 6Ohm @ 2A, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH86N30T

IXFH86N30T

MOSFET N-CH 300V 86A TO247AD

IXYS

2638 11.84
- +

Arabaya ekle

İstem şimdi

IXFH86N30T

Datenblatt

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 86A (Tc) 10V 43mOhm @ 43A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2485-A

2SK2485-A

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

368 4.52
- +

Arabaya ekle

İstem şimdi

2SK2485-A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJK60S4DPE-WS#J3

RJK60S4DPE-WS#J3

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

320 4.53
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
FS25SM-9A#B10

FS25SM-9A#B10

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

692 4.68
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
MSCSM120DAM31CTBL1NG

MSCSM120DAM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology

3495 125.80
- +

Arabaya ekle

İstem şimdi

MSCSM120DAM31CTBL1NG

Datenblatt

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) Chassis Mount
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