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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU4615PBF

IRFU4615PBF

MOSFET N-CH 150V 33A IPAK

Infineon Technologies

1344 2.19
- +

Arabaya ekle

İstem şimdi

IRFU4615PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP9P25

FQP9P25

MOSFET P-CH 250V 9.4A TO220-3

onsemi

2195 2.22
- +

Arabaya ekle

İstem şimdi

FQP9P25

Datenblatt

Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 250 V 9.4A (Tc) 10V 620mOhm @ 4.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD6N80E-GE3

SIHD6N80E-GE3

MOSFET N-CH 800V 5.4A DPAK

Vishay Siliconix

1566 2.23
- +

Arabaya ekle

İstem şimdi

SIHD6N80E-GE3

Datenblatt

Bulk E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ34SPBF

IRLZ34SPBF

MOSFET N-CH 60V 30A TO263

Vishay Siliconix

1980 2.27
- +

Arabaya ekle

İstem şimdi

IRLZ34SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM480P06CH X0G

TSM480P06CH X0G

MOSFET P-CHANNEL 60V 20A TO251

Taiwan Semiconductor Corporation

1446 2.28
- +

Arabaya ekle

İstem şimdi

TSM480P06CH X0G

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 66W (Tc) -50°C ~ 150°C (TJ) Through Hole
IPP147N12N3GXKSA1

IPP147N12N3GXKSA1

MOSFET N-CH 120V 56A TO220-3

Infineon Technologies

11678 2.30
- +

Arabaya ekle

İstem şimdi

IPP147N12N3GXKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.7mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF840LCPBF

IRF840LCPBF

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix

7911 2.30
- +

Arabaya ekle

İstem şimdi

IRF840LCPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4615PBF

IRFB4615PBF

MOSFET N-CH 150V 35A TO220AB

Infineon Technologies

5930 2.30
- +

Arabaya ekle

İstem şimdi

IRFB4615PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640SPBF

IRF640SPBF

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix

2025 2.30
- +

Arabaya ekle

İstem şimdi

IRF640SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1404PBF

IRF1404PBF

MOSFET N-CH 40V 202A TO220AB

Infineon Technologies

2419 2.31
- +

Arabaya ekle

İstem şimdi

IRF1404PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 202A (Tc) 10V 4mOhm @ 121A, 10V 4V @ 250µA 196 nC @ 10 V ±20V 5669 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPC50APBF

IRFPC50APBF

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix

650 4.42
- +

Arabaya ekle

İstem şimdi

IRFPC50APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 580mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 2100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2030

EPC2030

GANFET NCH 40V 31A DIE

EPC

6159 7.20
- +

Arabaya ekle

İstem şimdi

EPC2030

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 40 V 31A (Ta) - 2.4mOhm @ 30A, 5V 2.5V @ 16mA 18 nC @ 5 V - 1900 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
IPB65R095C7ATMA2

IPB65R095C7ATMA2

MOSFET N-CH 650V 24A TO263-3

Infineon Technologies

2001 7.39
- +

Arabaya ekle

İstem şimdi

IPB65R095C7ATMA2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP104N60

FCP104N60

MOSFET N-CH 600V 37A TO220-3

onsemi

407 4.61
- +

Arabaya ekle

İstem şimdi

FCP104N60

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 4165 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA24N50F

FDA24N50F

MOSFET N-CH 500V 24A TO3PN

onsemi

325 4.65
- +

Arabaya ekle

İstem şimdi

FDA24N50F

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 200mOhm @ 12A, 10V 5V @ 250µA 85 nC @ 10 V ±30V 4310 pF @ 25 V - 270W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4019PBF

IRFB4019PBF

MOSFET N-CH 150V 17A TO220AB

Infineon Technologies

2346 2.31
- +

Arabaya ekle

İstem şimdi

IRFB4019PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 17A (Tc) 10V 95mOhm @ 10A, 10V 4.9V @ 50µA 20 nC @ 10 V ±20V 800 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD17559Q5T

CSD17559Q5T

MOSFET N-CH 30V 100A 8VSON

Texas Instruments

362 3.33
- +

Arabaya ekle

İstem şimdi

CSD17559Q5T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Ta) 4.5V, 10V 1.15mOhm @ 40A, 10V 1.7V @ 250µA 51 nC @ 4.5 V ±20V 9200 pF @ 15 V - 3.2W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP5NK52ZD

STP5NK52ZD

MOSFET N-CH 520V 4.4A TO220AB

STMicroelectronics

2000 2.33
- +

Arabaya ekle

İstem şimdi

STP5NK52ZD

Datenblatt

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 520 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 16.9 nC @ 10 V ±30V 529 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3803PBF

IRL3803PBF

MOSFET N-CH 30V 140A TO220AB

Infineon Technologies

3026 2.34
- +

Arabaya ekle

İstem şimdi

IRL3803PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3306PBF

IRFB3306PBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies

11574 2.37
- +

Arabaya ekle

İstem şimdi

IRFB3306PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
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