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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP460LCPBF

IRFP460LCPBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

450 5.64
- +

Arabaya ekle

İstem şimdi

IRFP460LCPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R500C3XKSA1

IPW90R500C3XKSA1

MOSFET N-CH 900V 11A TO247-3

Infineon Technologies

1155 5.66
- +

Arabaya ekle

İstem şimdi

IPW90R500C3XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R099P7XKSA1

IPP60R099P7XKSA1

MOSFET N-CH 600V 31A TO220-3

Infineon Technologies

828 5.77
- +

Arabaya ekle

İstem şimdi

IPP60R099P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C120150B7S

UF3C120150B7S

1200V/150MOHM, SIC, FAST CASCODE

UnitedSiC

952 8.93
- +

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UF3C120150B7S

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 17A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 25.7 nC @ 12 V ±25V 738 pF @ 100 V Super Junction 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP264PBF

IRFP264PBF

MOSFET N-CH 250V 38A TO247-3

Vishay Siliconix

1386 5.92
- +

Arabaya ekle

İstem şimdi

IRFP264PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 38A (Tc) 10V 75mOhm @ 23A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 5400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA65N20

FQA65N20

MOSFET N-CH 200V 65A TO3PN

onsemi

208 5.98
- +

Arabaya ekle

İstem şimdi

FQA65N20

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 32mOhm @ 32.5A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7900 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8M100B

APT8M100B

MOSFET N-CH 1000V 8A TO247

Microchip Technology

641 4.70
- +

Arabaya ekle

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APT8M100B

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.8Ohm @ 4A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 1885 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP38N30X3M

IXFP38N30X3M

MOSFET N-CH 300V 38A TO220

IXYS

923 6.08
- +

Arabaya ekle

İstem şimdi

IXFP38N30X3M

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) - - - - - - - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065080B7S

UF3C065080B7S

SICFET N-CH 650V 27A D2PAK-7

UnitedSiC

2870 9.37
- +

Arabaya ekle

İstem şimdi

UF3C065080B7S

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 27A (Tc) - 105mOhm @ 20A, 12V 6V @ 10mA 23 nC @ 12 V ±25V 760 pF @ 100 V - 136.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH20N50P3

IXFH20N50P3

MOSFET N-CH 500V 20A TO247AD

IXYS

179 6.17
- +

Arabaya ekle

İstem şimdi

IXFH20N50P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP20NM50

STP20NM50

MOSFET N-CH 500V 20A TO220AB

STMicroelectronics

175 6.18
- +

Arabaya ekle

İstem şimdi

STP20NM50

Datenblatt

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 56 nC @ 10 V ±30V 1480 pF @ 25 V - 192W (Tc) -65°C ~ 150°C (TJ) Through Hole
C3M0280090D

C3M0280090D

SICFET N-CH 900V 11.5A TO247-3

Wolfspeed, Inc.

3800 6.19
- +

Arabaya ekle

İstem şimdi

C3M0280090D

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 11.5A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF35N60DM2

STF35N60DM2

MOSFET N-CH 600V 28A TO220FP

STMicroelectronics

261 6.31
- +

Arabaya ekle

İstem şimdi

STF35N60DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4004PBF

IRFP4004PBF

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies

917 6.46
- +

Arabaya ekle

İstem şimdi

IRFP4004PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH072N60

FCH072N60

MOSFET N-CH 600V 52A TO247-3

onsemi

168 6.57
- +

Arabaya ekle

İstem şimdi

FCH072N60

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 72mOhm @ 26A, 10V 3.5V @ 250µA 125 nC @ 10 V ±20V 5890 pF @ 380 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP026N10NF2SAKMA1

IPP026N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies

1448 6.60
- +

Arabaya ekle

İstem şimdi

IPP026N10NF2SAKMA1

Datenblatt

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 184A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0350120D

C3M0350120D

SICFET N-CH 1200V 7.6A TO247-3

Wolfspeed, Inc.

3704 6.66
- +

Arabaya ekle

İstem şimdi

C3M0350120D

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.6A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 19 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP075N15N3GXKSA1

IPP075N15N3GXKSA1

MOSFET N-CH 150V 100A TO220-3

Infineon Technologies

979 6.76
- +

Arabaya ekle

İstem şimdi

IPP075N15N3GXKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDH210N08

FDH210N08

MOSFET N-CH 75V TO247-3

onsemi

3422 6.82
- +

Arabaya ekle

İstem şimdi

FDH210N08

Datenblatt

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 210A (Tc) 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP260PBF

IRFP260PBF

MOSFET N-CH 200V 46A TO247-3

Vishay Siliconix

125 6.82
- +

Arabaya ekle

İstem şimdi

IRFP260PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 46A (Tc) 10V 55mOhm @ 28A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
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