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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MTP9N25E

MTP9N25E

N-CHANNEL POWER MOSFET

onsemi

4398 0.71
- +

Arabaya ekle

İstem şimdi

MTP9N25E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF6892STRPBF

IRF6892STRPBF

25V 999A DIRECTFET-LV

International Rectifier

3790 0.71
- +

Arabaya ekle

İstem şimdi

IRF6892STRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFR5410-IR

AUIRFR5410-IR

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier

2887 0.71
- +

Arabaya ekle

İstem şimdi

AUIRFR5410-IR

Datenblatt

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB80N06SL2-7

SPB80N06SL2-7

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies

600 0.79
- +

Arabaya ekle

İstem şimdi

SPB80N06SL2-7

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDU6680A

FDU6680A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8666 0.80
- +

Arabaya ekle

İstem şimdi

FDU6680A

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1425 pF @ 15 V - 1.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ583LS

2SJ583LS

P-CHANNEL POWER MOSFET

onsemi

5595 0.80
- +

Arabaya ekle

İstem şimdi

2SJ583LS

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF75823D3S

HUF75823D3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3600 0.80
- +

Arabaya ekle

İstem şimdi

HUF75823D3S

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 150 V 14A (Tc) 10V 150mOhm @ 14A, 10V 4V @ 250µA 54 nC @ 20 V ±20V 800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF643

IRF643

N-CHANNEL POWER MOSFET

Harris Corporation

3050 0.80
- +

Arabaya ekle

İstem şimdi

IRF643

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF7N50F

FDPF7N50F

MOSFET N-CH 500V 6A TO220F

Fairchild Semiconductor

2875 0.71
- +

Arabaya ekle

İstem şimdi

FDPF7N50F

Datenblatt

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.15Ohm @ 3A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 960 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF9Z34N-INF

AUIRF9Z34N-INF

AUTOMOTIVE HEXFET P CHANNEL

Infineon Technologies

1317 0.71
- +

Arabaya ekle

İstem şimdi

AUIRF9Z34N-INF

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF543

IRF543

N-CHANNEL POWER MOSFET

Harris Corporation

965 0.71
- +

Arabaya ekle

İstem şimdi

IRF543

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK754R0-55B,127

BUK754R0-55B,127

PFET, 75A I(D), 55V, 0.004OHM, 1

NXP USA Inc.

960 0.71
- +

Arabaya ekle

İstem şimdi

BUK754R0-55B,127

Datenblatt

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 86 nC @ 10 V ±20V 6776 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75631SK8T_NB82083

HUF75631SK8T_NB82083

N CHANNEL ULTRAFET 100V, 33A, 4

Fairchild Semiconductor

651 0.71
- +

Arabaya ekle

İstem şimdi

HUF75631SK8T_NB82083

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Ta) 10V 39mOhm @ 5.5A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1225 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSS10N60B

SSS10N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

470 0.71
- +

Arabaya ekle

İstem şimdi

SSS10N60B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tj) 10V 800mOhm @ 4.5A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 2700 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2520T1H-T2-AT

UPA2520T1H-T2-AT

MOSFET N-CH 30V 10A 8VSOF

Renesas Electronics America Inc

9000 0.72
- +

Arabaya ekle

İstem şimdi

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) - 13.2mOhm @ 10A, 10V 2.5V @ 1mA 10.8 nC @ 5 V - 1100 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
FQPF3N80

FQPF3N80

MOSFET N-CH 800V 1.8A TO220F

Fairchild Semiconductor

3682 0.72
- +

Arabaya ekle

İstem şimdi

FQPF3N80

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 5V @ 250µA 19 nC @ 10 V ±30V 690 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI13N06LTU

FQI13N06LTU

MOSFET N-CH 60V 13.6A I2PAK

Fairchild Semiconductor

2955 0.72
- +

Arabaya ekle

İstem şimdi

FQI13N06LTU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK0657DPA-WS#J5A

RJK0657DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2720 0.72
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
RF1K49156

RF1K49156

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1660 0.72
- +

Arabaya ekle

İstem şimdi

RF1K49156

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS240B

IRFS240B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1420 0.72
- +

Arabaya ekle

İstem şimdi

IRFS240B

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
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