Hoş geldiniz. Element (Hong Kong) Technology Co., Ltd.!

+86 15361839241 0755-23603516
Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UPA2800T1L-E1-AY

UPA2800T1L-E1-AY

MOSFET N-CH 30V 17A 8DFN

Renesas Electronics America Inc

6000 0.75
- +

Arabaya ekle

İstem şimdi

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) - 7.3mOhm @ 17A, 10V 2.5V @ 1mA 17 nC @ 5 V - 1770 pF @ 15 V - - - Surface Mount
2SK2054(0)T1-AZ

2SK2054(0)T1-AZ

N-CHANNEL MOSFET

Renesas Electronics America Inc

5800 0.75
- +

Arabaya ekle

İstem şimdi

2SK2054(0)T1-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF720PBF-BE3

IRF720PBF-BE3

MOSFET N-CH 400V 3.3A TO220AB

Vishay Siliconix

868 1.35
- +

Arabaya ekle

İstem şimdi

IRF720PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) - 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z14PBF-BE3

IRF9Z14PBF-BE3

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix

445 1.35
- +

Arabaya ekle

İstem şimdi

IRF9Z14PBF-BE3

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP6035L

FDP6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3250 0.75
- +

Arabaya ekle

İstem şimdi

FDP6035L

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1230 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Through Hole
ISL9N308AP3

ISL9N308AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3200 0.75
- +

Arabaya ekle

İstem şimdi

ISL9N308AP3

Datenblatt

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8Ohm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2624LS-CD11

2SK2624LS-CD11

N-CHANNEL SILICON MOSFET

onsemi

2500 0.75
- +

Arabaya ekle

İstem şimdi

2SK2624LS-CD11

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
ISL9N308AS3ST

ISL9N308AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2400 0.75
- +

Arabaya ekle

İstem şimdi

ISL9N308AS3ST

Datenblatt

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8Ohm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI2P25TU

FQI2P25TU

MOSFET P-CH 250V 2.3A I2PAK

Fairchild Semiconductor

1000 0.75
- +

Arabaya ekle

İstem şimdi

FQI2P25TU

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 4Ohm @ 1.15A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI3P20TU

FQI3P20TU

MOSFET P-CH 200V 2.8A I2PAK

Fairchild Semiconductor

1000 0.75
- +

Arabaya ekle

İstem şimdi

FQI3P20TU

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB16N25CTM

FQB16N25CTM

MOSFET N-CH 250V 15.6A D2PAK

Fairchild Semiconductor

845 0.75
- +

Arabaya ekle

İstem şimdi

FQB16N25CTM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 15.6A (Tc) 10V 270mOhm @ 7.8A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPA08N50C3

SPA08N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies

720 0.75
- +

Arabaya ekle

İstem şimdi

SPA08N50C3

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU8874

FDU8874

MOSFET N-CH 30V 18A/116A IPAK

Fairchild Semiconductor

5400 0.76
- +

Arabaya ekle

İstem şimdi

FDU8874

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1K4915696

RF1K4915696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2500 0.76
- +

Arabaya ekle

İstem şimdi

RF1K4915696

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9522

IRF9522

P-CHANNEL POWER MOSFET

Harris Corporation

1768 0.76
- +

Arabaya ekle

İstem şimdi

IRF9522

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 5A (Tc) 10V 800mOhm @ 3.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK7510-100B,127

BUK7510-100B,127

PFET, 75A I(D), 100V, 0.01OHM, 1

NXP USA Inc.

1139 0.76
- +

Arabaya ekle

İstem şimdi

BUK7510-100B,127

Datenblatt

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 80 nC @ 10 V ±20V 6773 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
NDB7052L

NDB7052L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

800 0.76
- +

Arabaya ekle

İstem şimdi

NDB7052L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 5V, 10V 7.5mOhm @ 37.5A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 4030 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
TK7R0E08QM,S1X

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage

212 1.38
- +

Arabaya ekle

İstem şimdi

TK7R0E08QM,S1X

Datenblatt

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C Through Hole
IPP60R600P7

IPP60R600P7

N-CHANNEL POWER MOSFET

Infineon Technologies

500 0.76
- +

Arabaya ekle

İstem şimdi

IPP60R600P7

Datenblatt

Bulk - Active - - - - - - - - - - - - - -
IPI052NE7N3G

IPI052NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies

396 0.76
- +

Arabaya ekle

İstem şimdi

IPI052NE7N3G

Datenblatt

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 354355356357358359360361...2123Next»
Bir site iste
Bölüm numarası
Kıymet
Kontakt
E-posta
Şerhler
  • Ev.

    Ev.

    PRODUKT

    Yapılar

    Telefon

    Telefon

    USER

    USER