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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK1060-AZ

2SK1060-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1526 1.02
- +

Arabaya ekle

İstem şimdi

2SK1060-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RFL4N15

RFL4N15

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation

1482 1.02
- +

Arabaya ekle

İstem şimdi

RFL4N15

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 400mOhm @ 2A, 10V 4V @ 1mA - ±20V 850 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75343G3

HUFA75343G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor

821 1.02
- +

Arabaya ekle

İstem şimdi

HUFA75343G3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9610PBF-BE3

IRF9610PBF-BE3

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix

892 1.75
- +

Arabaya ekle

İstem şimdi

IRF9610PBF-BE3

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) - 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75639S3ST-F085A

HUFA75639S3ST-F085A

MOSFET N-CH 100V 56A D2PAK

Fairchild Semiconductor

766 1.03
- +

Arabaya ekle

İstem şimdi

HUFA75639S3ST-F085A

Datenblatt

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) - 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP8870-F085

FDP8870-F085

MOSFET N-CH 30V 19A/156A TO220-3

Fairchild Semiconductor

291 1.03
- +

Arabaya ekle

İstem şimdi

FDP8870-F085

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 156A (Tc) 4.5V, 10V 4.1mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9620PBF-BE3

IRF9620PBF-BE3

MOSFET P-CH 200V 3.5A TO220AB

Vishay Siliconix

797 1.76
- +

Arabaya ekle

İstem şimdi

IRF9620PBF-BE3

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75344S3

HUFA75344S3

MOSFET N-CH 55V 75A I2PAK

Fairchild Semiconductor

9217 1.04
- +

Arabaya ekle

İstem şimdi

HUFA75344S3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR4104

AUIRFR4104

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

8742 1.04
- +

Arabaya ekle

İstem şimdi

AUIRFR4104

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75339G3

HUF75339G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor

3009 1.04
- +

Arabaya ekle

İstem şimdi

HUF75339G3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP17N06L

RFP17N06L

N-CHANNEL, MOSFET

Harris Corporation

2275 1.04
- +

Arabaya ekle

İstem şimdi

RFP17N06L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 130mOhm @ 17A, 5V 2V @ 1mA 45 nC @ 30 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD16N03LSM

RFD16N03LSM

N-CHANNEL POWER MOSFET

Harris Corporation

2057 1.04
- +

Arabaya ekle

İstem şimdi

RFD16N03LSM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 16A - - - - - - - - - Surface Mount
SPP12N50C3

SPP12N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies

1250 1.04
- +

Arabaya ekle

İstem şimdi

SPP12N50C3

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF44N10

FQAF44N10

MOSFET N-CH 100V 33A TO3PF

Fairchild Semiconductor

1044 1.04
- +

Arabaya ekle

İstem şimdi

FQAF44N10

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 39mOhm @ 16.5A, 10V 4V @ 250µA 62 nC @ 10 V ±25V 1800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
SP001017058

SP001017058

IPP60R380P6 - 600V N-CHANNEL

Infineon Technologies

1000 1.04
- +

Arabaya ekle

İstem şimdi

SP001017058

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SIHP6N80AE-GE3

SIHP6N80AE-GE3

MOSFET N-CH 800V 5A TO220AB

Vishay Siliconix

980 1.77
- +

Arabaya ekle

İstem şimdi

SIHP6N80AE-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) - 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF9P25

FQAF9P25

MOSFET P-CH 250V 7.1A TO3PF

Fairchild Semiconductor

590 1.04
- +

Arabaya ekle

İstem şimdi

FQAF9P25

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 7.1A (Tc) 10V 620mOhm @ 3.55A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI12N50C3IN

SPI12N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies

480 1.04
- +

Arabaya ekle

İstem şimdi

SPI12N50C3IN

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SPI16N50C3IN

SPI16N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies

448 1.04
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
FDP75N08

FDP75N08

MOSFET N-CH 75V 75A TO220-3

Fairchild Semiconductor

365 1.04
- +

Arabaya ekle

İstem şimdi

FDP75N08

Datenblatt

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 11mOhm @ 37.5A, 10V 4V @ 250µA 104 nC @ 10 V ±20V 4468 pF @ 25 V - 131W (Tc) -55°C ~ 150°C (TJ) Through Hole
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