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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUFA76437S3ST

HUFA76437S3ST

MOSFET N-CH 60V 71A D2PAK

Fairchild Semiconductor

9600 1.11
- +

Arabaya ekle

İstem şimdi

HUFA76437S3ST

Datenblatt

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2760T1A-E1-AT

UPA2760T1A-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

9000 1.11
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
UPA2727T1A-E1-AZ

UPA2727T1A-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

6000 1.11
- +

Arabaya ekle

İstem şimdi

UPA2727T1A-E1-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
UPA2754GR-E1-AT

UPA2754GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

4799 1.11
- +

Arabaya ekle

İstem şimdi

UPA2754GR-E1-AT

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RF1S540

RF1S540

28A, 100V, 0.077 OHM, N-CHANNEL

Harris Corporation

4101 1.11
- +

Arabaya ekle

İstem şimdi

RF1S540

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34PBF-BE3

IRFZ34PBF-BE3

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix

921 1.97
- +

Arabaya ekle

İstem şimdi

IRFZ34PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) - 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK5026DPP-00#T2

RJK5026DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2724 1.11
- +

Arabaya ekle

İstem şimdi

RJK5026DPP-00#T2

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPP082N10NF2SAKMA1

IPP082N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies

556 1.97
- +

Arabaya ekle

İstem şimdi

IPP082N10NF2SAKMA1

Datenblatt

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 77A (Tc) 6V, 10V 8.2mOhm @ 50A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 3.8W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2084L-E

2SK2084L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

955 1.11
- +

Arabaya ekle

İstem şimdi

2SK2084L-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFH4210DTRPBF

IRFH4210DTRPBF

HEXFET POWER MOSFET

International Rectifier

937 1.11
- +

Arabaya ekle

İstem şimdi

IRFH4210DTRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 44A (Ta) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.1V @ 100µA 77 nC @ 10 V ±20V 4812 pF @ 13 V - 3.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ20PBF-BE3

IRFZ20PBF-BE3

MOSFET N-CH 50V 15A TO220AB

Vishay Siliconix

671 1.99
- +

Arabaya ekle

İstem şimdi

IRFZ20PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) - 100mOhm @ 10A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 860 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI80N04S3-03

IPI80N04S3-03

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies

8000 1.12
- +

Arabaya ekle

İstem şimdi

IPI80N04S3-03

Datenblatt

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8114PBF

IRL8114PBF

MOSFET N-CH 30V 90A TO220AB

International Rectifier

5900 1.12
- +

Arabaya ekle

İstem şimdi

IRL8114PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) - 4.5mOhm @ 40A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V 2660 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI9N25CTU

FQI9N25CTU

MOSFET N-CH 250V 8.8A I2PAK

Fairchild Semiconductor

2000 1.12
- +

Arabaya ekle

İstem şimdi

FQI9N25CTU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76139S3

HUF76139S3

N-CHANNEL POWER MOSFET

Harris Corporation

800 1.12
- +

Arabaya ekle

İstem şimdi

HUF76139S3

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±16V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP70N08

FQP70N08

MOSFET N-CH 80V 70A TO220-3

Fairchild Semiconductor

797 1.12
- +

Arabaya ekle

İstem şimdi

FQP70N08

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 17mOhm @ 35A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA5N90

FQA5N90

MOSFET N-CH 900V 5.8A TO3P

Fairchild Semiconductor

523 1.12
- +

Arabaya ekle

İstem şimdi

FQA5N90

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.8A (Tc) 10V 2.3Ohm @ 2.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1550 pF @ 25 V - 185W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R350CP

IPA50R350CP

10A, 500V, 0.35OHM, N-CHANNEL

Infineon Technologies

500 500.00
- +

Arabaya ekle

İstem şimdi

IPA50R350CP

Datenblatt

Bulk * Active - - - - - - - - - - - - -
RFG40N10LE

RFG40N10LE

N-CHANNEL POWER MOSFET

Harris Corporation

489 1.12
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
AUIRFN7107TR

AUIRFN7107TR

AUTOMOTIVE POWER MOSFET

International Rectifier

8875 1.13
- +

Arabaya ekle

İstem şimdi

AUIRFN7107TR

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 14A (Ta), 75A (Tc) 10V 8.5mOhm @ 45A, 10V 4V @ 100µA 77 nC @ 10 V ±20V 3001 pF @ 25 V - 4.4W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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