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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK2364(1)-AZ

2SK2364(1)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

253 3.73
- +

Arabaya ekle

İstem şimdi

2SK2364(1)-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SK2515-A

2SK2515-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

246 3.78
- +

Arabaya ekle

İstem şimdi

2SK2515-A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF75645S3ST_NL

HUF75645S3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

342 3.85
- +

Arabaya ekle

İstem şimdi

HUF75645S3ST_NL

Datenblatt

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75645S3ST_Q

HUF75645S3ST_Q

N CHANNEL ULTRAFET 100V, 75A, 1

Fairchild Semiconductor

308 3.85
- +

Arabaya ekle

İstem şimdi

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3510-Z-E1-AZ

2SK3510-Z-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1000 3.89
- +

Arabaya ekle

İstem şimdi

2SK3510-Z-E1-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFP462

IRFP462

N-CHANNEL POWER MOSFET

Harris Corporation

152 3.93
- +

Arabaya ekle

İstem şimdi

IRFP462

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 11A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4100 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1461

2SK1461

N-CHANNEL POWER MOSFET

onsemi

500 3.95
- +

Arabaya ekle

İstem şimdi

2SK1461

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF353

IRF353

N-CHANNEL POWER MOSFET

Harris Corporation

460 3.96
- +

Arabaya ekle

İstem şimdi

IRF353

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 13A (Tc) 10V 400mOhm @ 8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA075N15N3

IPA075N15N3

N-CHANNEL POWER MOSFET

Infineon Technologies

491 3.97
- +

Arabaya ekle

İstem şimdi

IPA075N15N3

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJK6014DPP-00#T2

RJK6014DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

420 4.01
- +

Arabaya ekle

İstem şimdi

Bulk * Active - - - - - - - - - - - - - -
FQP18N50V2

FQP18N50V2

MOSFET N-CH 500V 18A TO220-3

Fairchild Semiconductor

590 4.04
- +

Arabaya ekle

İstem şimdi

FQP18N50V2

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ296STL-E

2SJ296STL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1000 4.05
- +

Arabaya ekle

İstem şimdi

Bulk * Obsolete - - - - - - - - - - - - - -
BTS132

BTS132

N-CHANNEL POWER MOSFET

Infineon Technologies

232 4.06
- +

Arabaya ekle

İstem şimdi

BTS132

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
IXTA08N120P

IXTA08N120P

MOSFET N-CH 1200V 800MA TO263

IXYS

2506 4.06
- +

Arabaya ekle

İstem şimdi

IXTA08N120P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 800mA (Tc) 10V 25Ohm @ 500mA, 10V 4.5V @ 50µA 14 nC @ 10 V ±20V 333 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQA35N40

FQA35N40

MOSFET N-CH 400V 35A TO3P

Fairchild Semiconductor

597 4.14
- +

Arabaya ekle

İstem şimdi

FQA35N40

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2381

NTE2381

MOSFET P-CHANNEL 500V 2.7A TO220

NTE Electronics, Inc

3975 11.36
- +

Arabaya ekle

İstem şimdi

NTE2381

Datenblatt

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 85W (Tc) -65°C ~ 150°C Through Hole
IRFP362

IRFP362

N-CHANNEL POWER MOSFET

Harris Corporation

173 4.21
- +

Arabaya ekle

İstem şimdi

IRFP362

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 20A (Tc) 10V 250mOhm @ 13A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 4000 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1567-E

2SK1567-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

228 4.32
- +

Arabaya ekle

İstem şimdi

2SK1567-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
GP2T080A120H

GP2T080A120H

SIC MOSFET 1200V 80M TO-247-4L

SemiQ

3717 11.62
- +

Arabaya ekle

İstem şimdi

GP2T080A120H

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 61 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH130N15X3

IXFH130N15X3

MOSFET N-CH 150V 130A TO247

IXYS

2647 11.66
- +

Arabaya ekle

İstem şimdi

IXFH130N15X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
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