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Fotoğraf Mfr. Bölüm # Stock Ödül Kıymet Veri sayfası Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
GCMX080B120S1-E1

GCMX080B120S1-E1

SIC 1200V 80M MOSFET SOT-227

SemiQ

3515 23.32
- +

Arabaya ekle

İstem şimdi

GCMX080B120S1-E1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1336 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
2SK1934-E

2SK1934-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

532 12.32
- +

Arabaya ekle

İstem şimdi

2SK1934-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IXFK220N15P

IXFK220N15P

MOSFET N-CH 150V 220A TO264AA

IXYS

3509 23.72
- +

Arabaya ekle

İstem şimdi

IXFK220N15P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 220A (Tc) 10V 9mOhm @ 500mA, 10V 4.5V @ 8mA 162 nC @ 10 V ±20V 15400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10050LVRG

APT10050LVRG

MOSFET N-CH 1000V 21A TO264

Microchip Technology

2653 24.87
- +

Arabaya ekle

İstem şimdi

APT10050LVRG

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
2SK1968-E

2SK1968-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

181 13.43
- +

Arabaya ekle

İstem şimdi

2SK1968-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
H5N5016PL-E

H5N5016PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3155 13.66
- +

Arabaya ekle

İstem şimdi

H5N5016PL-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
GCMS080B120S1-E1

GCMS080B120S1-E1

SIC 1200V 80M MOSFET & 10A SBD S

SemiQ

3029 25.96
- +

Arabaya ekle

İstem şimdi

GCMS080B120S1-E1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1374 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
RJK60S5DPP-E0#T2

RJK60S5DPP-E0#T2

MOSFET N-CH 600V 20A TO220FP

Renesas Electronics America Inc

226 14.80
- +

Arabaya ekle

İstem şimdi

RJK60S5DPP-E0#T2

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V Super Junction 33.7W (Tc) 150°C (TJ) Through Hole
IXFL82N60P

IXFL82N60P

MOSFET N-CH 600V 55A ISOPLUS264

IXYS

3326 33.56
- +

Arabaya ekle

İstem şimdi

IXFL82N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V 78mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1T600N04T2

MMIX1T600N04T2

MOSFET N-CH 40V 600A 24SMPD

IXYS

3497 38.61
- +

Arabaya ekle

İstem şimdi

MMIX1T600N04T2

Datenblatt

Tube FRFET®, SupreMOS® Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.3mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT5010JVR

APT5010JVR

MOSFET N-CH 500V 44A ISOTOP

Microchip Technology

2899 38.70
- +

Arabaya ekle

İstem şimdi

APT5010JVR

Datenblatt

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Chassis Mount
IXFN40N90P

IXFN40N90P

MOSFET N-CH 900V 33A SOT227B

IXYS

3508 40.00
- +

Arabaya ekle

İstem şimdi

IXFN40N90P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 33A (Tc) 10V 210mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTZ550N055T2

IXTZ550N055T2

MOSFET N-CH 55V 550A DE475

IXYS

2485 40.97
- +

Arabaya ekle

İstem şimdi

IXTZ550N055T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFB82N60Q3

IXFB82N60Q3

MOSFET N-CH 600V 82A PLUS264

IXYS

3056 42.56
- +

Arabaya ekle

İstem şimdi

IXFB82N60Q3

Datenblatt

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 82A (Tc) 10V 75mOhm @ 41A, 10V 6.5V @ 8mA 275 nC @ 10 V ±30V 13500 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC035SMA170S

MSC035SMA170S

MOSFET SIC 1700V 35 MOHM TO-268

Microchip Technology

2622 42.71
- +

Arabaya ekle

İstem şimdi

MSC035SMA170S

Datenblatt

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1700 V 59A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC080SMA120JS15

MSC080SMA120JS15

MOSFET SIC 1200V 80 MOHM 15A SOT

Microchip Technology

3594 46.46
- +

Arabaya ekle

İstem şimdi

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 143W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
MMIX1F230N20T

MMIX1F230N20T

MOSFET N-CH 200V 168A 24SMPD

IXYS

2004 48.03
- +

Arabaya ekle

İstem şimdi

MMIX1F230N20T

Datenblatt

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 200 V 168A (Tc) 10V 8.3mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MMIX1F420N10T

MMIX1F420N10T

MOSFET N-CH 100V 334A 24SMPD

IXYS

3262 49.13
- +

Arabaya ekle

İstem şimdi

MMIX1F420N10T

Datenblatt

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 334A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 4700 pF @ 10 V - 680W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MMIX1T550N055T2

MMIX1T550N055T2

MOSFET N-CH 55V 550A 24SMPD

IXYS

3322 49.65
- +

Arabaya ekle

İstem şimdi

MMIX1T550N055T2

Datenblatt

Tube FRFET®, SupreMOS® Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.3mOhm @ 100A, 10V 3.8V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTE2384

NTE2384

MOSFET N-CHANNEL 900V 6A TO3

NTE Electronics, Inc

2482 50.84
- +

Arabaya ekle

İstem şimdi

NTE2384

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
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